In this work, we investigated the thermoelectric properties of MoS₂ thin films deposited on SiO₂/Si wafer substrates as prepared by the radio frequency (RF) magnetron sputtering technique. A fixed sputtering power of 200 W was maintained for 30 min to facilitate thin film deposition. After thin film deposition, as-deposited thin films were annealed by the vacuum annealing method at 550, 650, and 700 °C. The crystal structure, morphology, film thickness, and atomic composition of the MoS₂ thin film were characterized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS) techniques, respectively. The elemental states of thin films were determined through radiative X-ray photoelectron spectroscopy (XPS) analysis. The thermoelectric properties (electrical resistivity; ρ and Seebeck coefficient; S) were measured by the ZEM-3 method to calculate the power factor (PF) value. The results showed that the as-deposited thin films had improved the crystallography of MoS₂ from an amorphous to a crystalline phase after annealing. At a temperature of 523 K, the maximum power factor is 4.74 mW m^˗1 K^˗2 (ρ = 3.06 × 10^˗4 Ω m and S = −1.21 mV K^˗1) for annealing a thin film sample at 550 °C.